2008. 9. 2 1/2 semiconductor technical data BC807W epitaxial planar pnp transistor revision no : 0 general purpose application. switching application. features ? complementary to bc817w. maximum rating (ta=25 ? ) 1. emitter 2. base 3. collector dim millimeters a b d e usm 2.00 0.20 1.25 0.15 0.90 0.10 0.3+0.10/-0.05 2.10 0.20 0.65 0.15+0.1/-0.06 1.30 0.00~0.10 0.70 c g h j k l k 1 3 2 e b d a j g c l h mm n n m0.42 n0 .10 min + _ + _ + _ + _ electrical characteristics (ta=25 ? ) note : h fe classification 16:100 ?- 250 , 25:160 ?- 400 , 40:250 ?- 630 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-20v, i e =0 - - -0.1 a emitter cut-off current i ebo v eb =-5v, i c =0 - - -0.1 a dc current gain (note) h fe (1) v ce =-1v, i c =-100ma 100 - 630 h fe (2) v ce =-1v, i c =-500ma 40 - - collector-emitter saturation voltage v ce(sat) i c =-500ma, i b =-50ma - - -0.7 v base-emitter voltage v be v ce =-1v, i c =-500ma - - -1.2 v transition frequency f t v ce =-5v, i c =-10ma, f=100mhz 80 - - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 9 - pf characteristic symbol rating unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -45 v emitter-base voltage v ebo -5 v collector current i c -500 ma emitter current i e 500 ma collector power dissipation p c 100 mw junction temperature t j 150 ? storage temperature range t stg -55 ?- 150 ? type. BC807W-16 BC807W-25 BC807W-40 mark 1m 1n 1r mark spec type name marking lot no.
2008. 9. 2 2/2 BC807W revision no : 0 c collector current i (ma) 0 10 dc current gain h fe -1000 -300 collector current i (ma) c 0 collector-emitter voltage v (v) ce ce c i - v (low voltage region) h - i -1 collector current i (ma) c -0.2 base-emitter voltage v (v) be v - i c collector current i (ma) -300 -1000 -0.01 ce(sat) collector-emitter saturation -1 -2 -3 -4 -5 -6 -200 -400 -600 -800 i - v cbe -0.4 -0.6 -0.8 -1.0 -3 -10 -30 -100 -300 -1000 common emitter v =1v ce fe c -100 -30 -10 30 100 300 1000 50 500 common emitter v =-1v ce ce(sat) c voltage v (v) -100 -30 -10 -0.03 -0.1 -0.3 -1 -3 common emitter i /i =25 c b ce v =-5v common emitter 500 100 30 -10 -30 -100 10 -1000 -300 -3 -1 collector current i (ma) c c t f - i transition frequency t f (mhz) 300 common emitter ta=25 c ta=25 c ta=100 c ta=25 c ta=-25 c -5 -4 -3 -2 0 i =-1ma b ta=100 c ta=25 c ta=- 2 5 c ta=25 c ta=-25 c ta=100 c p (mw) c 0 ambient temperature ta ( c) c p - ta collector power dissipation 25 50 75 100 125 150 175 0 100 200 300
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